Product Datasheet Search Results:

HAT2108R.pdf4 Pages, 55 KB, Original
HAT2108R
Renesas Technology / Hitachi Semiconductor
MOSFET, Switching; VDSS (V): 28; ID (A): 11; Pch : 2; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: 0.012; RDS (ON) typ. (ohm) @2.5V: 0.015; Ciss (pF) typ: 2200; toff ( us) typ: 0.07; Package: SOP-8
HAT2108R.pdf7 Pages, 91 KB, Original
HAT2108R
Renesas Electronics
11 A, 28 V, 0.022 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
HAT2108R-EL-E.pdf6 Pages, 74 KB, Original
HAT2108R-EL-E
Renesas Electronics
11 A, 28 V, 0.022 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Renesas.com/HAT2108R
{"Status":"DISCONTINUED","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"FP-8DA, SOP-8","Pulsed Drain Current-Max (IDM)":"88 A","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"11 A","Transistor Application":"SWITCHING","Number of Elements":"2","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE POWER"...
1428 Bytes - 08:05:48, 01 November 2024
Renesas.com/HAT2108R-EL-E
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0220 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"88 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-O...
1563 Bytes - 08:05:48, 01 November 2024

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