Product Datasheet Search Results:
6 Pages, 178 KB, Scan- IRF333
- Fairchild Semiconductor
- N-Channel Power MOSFETs, 5.5A, 350 V/400V
4 Pages, 200 KB, Original- IRF333
- Fci Semiconductor
- POWER MOSFETs
4 Pages, 200 KB, Original- IRF333
- Frederick Components
- Power MOSFET Selection Guide
19 Pages, 625 KB, Original- IRF333
- Motorola / Freescale Semiconductor
- TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39
5 Pages, 162 KB, Scan- IRF333
- General Electric Solid State
- N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A.
2 Pages, 126 KB, Scan- IRF333
- General Electric
- Power Transistor Data Book 1985
5 Pages, 170 KB, Scan- IRF333
- Harris Semiconductor
- Power MOSFET Data Book 1990
5 Pages, 185 KB, Scan- IRF333R
- Harris Semiconductor
- Power MOSFET Data Book 1990
7 Pages, 59 KB, Original- IRF333
- Intersil Corporation
- 4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 ?, N-Channel Power MOSFETs
1 Pages, 42 KB, Original- IRF333
- International Rectifier
- TO-3 N-Channel Hexfet Power MOSFETS
1 Pages, 41 KB, Original- IRF333R
- International Rectifier
- Rugged Series Power MOSFETs - N-Channel
Product Details Search Results:
Various/IRF333R
{"C(iss) Max. (F)":"700p","Absolute Max. Power Diss. (W)":"75","g(fs) Max, (S) Trans. conduct,":"4.0","I(D) Abs. Max.(A) Drain Curr.":"3.0","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"56n","r(DS)on Max. (Ohms)":"1.5","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"18","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"2.9","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"3.0","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Packa...
1295 Bytes - 04:03:53, 11 November 2024
